Passivation of Metal Surface States: Microscopic Origin for Uniform Monolayer Graphene by Low Temperature Chemical Vapor Deposition

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• 作者：Insu Jeon ; Heejun Yang ; Sung-Hoon Lee ; Jinseong Heo ; David H. Seo ; Jaikwang Shin ; U-In Chung ; Zheong Gou Kim ; Hyun-Jong Chung ; Sunae Seo
• 刊名：ACS Nano
• 出版年：2011
• 出版时间：March 22, 2011
• 年：2011
• 卷：5
• 期：3
• 页码：1915-1920
• 全文大小：853K
• 年卷期：0
• ISSN：1936-086X

文摘

Scanning tunneling microscopy (STM) and density functional theory (DFT) calculations were used to investigate the surface morphology and electronic structure of graphene synthesized on Cu by low temperature chemical vapor deposition (CVD). Periodic line patterns originating from the arrangements of carbon atoms on the Cu surface passivate the interaction between metal substrate and graphene, resulting in flawless inherent graphene band structure in pristine graphene/Cu. The effective elimination of metal surface states by the passivation is expected to contribute to the growth of monolayer graphene on Cu, which yields highly enhanced uniformity on the wafer scale, making progress toward the commercial application of graphene.