Zn-Doped p-Type Gallium Phosphide Nanowire Photocathodes from a Surfactant-Free Solution Synthesis
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- 作者：Chong Liu ; Jianwei Sun ; Jinyao Tang ; Peidong Yang
- 刊名：Nano Letters
- 出版年：2012
- 出版时间：October 10, 2012
- 年：2012
- 卷：12
- 期：10
- 页码：5407-5411
- 全文大小：306K
- 年卷期：v.12,no.10(October 10, 2012)
- ISSN：1530-6992
文摘
Gallium phosphide (GaP) nanowire photocathodes synthesized using a surfactant-free solution鈥搇iquid鈥搒olid (SLS) method were investigated for their photoelectrochemical evolution of hydrogen. Zinc as a p-type dopant was introduced into the nanowires during synthesis to optimize the photocathode鈥檚 response. Investigation of the electrical properties of Zn-doped GaP nanowires confirmed their p-type conductivity. After optimization of the nanowire diameter and Zn doping concentration, higher absorbed photon-to-current efficiency (APCE) over the spectrum was achieved. The versatility of the SLS synthesis and the capability to control the electrical properties suggest that our approach could be generalized to other III鈥揤 and II鈥揤I semiconductors.