Impact of Oxygen Plasma Treatment on the Device Performance of Zinc Oxide Nanoparticle-Based Thin-Film Transistors

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• 作者：Hendrik Faber ; Johannes Hirschmann ; Martin Klaum眉nzer ; Bj枚rn Braunschweig ; Wolfgang Peukert ; Marcus Halik
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2012
• 出版时间：March 28, 2012
• 年：2012
• 卷：4
• 期：3
• 页码：1693-1696
• 全文大小：266K
• 年卷期：v.4,no.3(March 28, 2012)
• ISSN：1944-8252

文摘

Thin-films of zinc oxide nanoparticles were investigated by photoluminescence spectroscopy and a broad defect-related yellow-green emission was observed. Oxygen plasma treatment was applied in order to reduce the number of defects, and the emission intensity was quenched to 4% of the initial value. Thin-film transistors that incorporate the nanoparticles as active semiconducting layers show an improved device performance after oxygen plasma treatment. The maximum drain current and the charge carrier mobility increased more than 1 order of magnitude up to a nominal value of 23 cm² V^鈥? s^鈥? and the threshold voltage was lowered.

Keywords:

zinc oxide; nanoparticles; plasma treatment; thin-film transistors