Excitation of Local Field Enhancement on Silicon Nanowires
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文摘
The interaction between light and reduced-dimensionality silicon attracts significant interest due to the possibilities of designing nanoscaledoptical devices, highly cost-efficient solar cells, and ultracompact optoelectronic systems that are integrated with standard microelectronictechnology. We demonstrate that Si nanowires (SiNWs) possessing metal-nanocluster coatings support a multiplicatively enhanced near-fieldlight-matter interaction. Raman scattering from chemisorbed probing molecules provides a quantitative measure of the strength of this enhancedcoupling. An enhancement factor of 2 orders of magnitude larger than that for the surface plasmon resonance alone (without the SiNWs)along with the attractive properties of SiNWs, including synthetic controllability of shape, indicates that these nanostructures may be anattractive and versatile material platform for the design of nanoscaled optical and optoelectronic circuits.

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