Tailoring the Electrical Properties of Graphene Layers by Molecular Doping
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- 作者：Arun Kumar Singh ; Muneer Ahmad ; Vivek Kumar Singh ; Koo Shin ; Yongho Seo ; Jonghwa Eom
- 刊名：ACS Applied Materials & Interfaces
- 出版年：2013
- 出版时间：June 12, 2013
- 年：2013
- 卷：5
- 期：11
- 页码：5276-5281
- 全文大小：391K
- 年卷期：v.5,no.11(June 12, 2013)
- ISSN：1944-8252
文摘
It is an essential issue in graphene-based nanoelectronic and optoelectronic devices to tune the electrical properties of graphene layers, while preserving its unique band structure. Here, we report the tuning of electronic properties of single-, bi-, and trilayer mechanically exfoliated graphenes by p-toluenesulfonic acid (PTSA) molecular doping. Raman spectroscopy and charge transport measurements revealed that PTSA molecule imposes n-doping to single-, bi-, and trilayer graphenes. The shift of G and 2D peak frequencies and intensity ratio of single-, bi-, and trilayer graphenes are analyzed as a function of reaction time. The Dirac point is also analyzed as a function of reaction time indicates the n-type doping effect for all single-, bi-, and trilayer graphenes. Our study demonstrates that chemical modification is a simple approach to tailor the electrical properties of single-, bi-, and trilayer graphenes, while maintaining the important electrical assets.