Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

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• 作者：Joshua A. Robinson ; Maxwell Wetherington ; Joseph L. Tedesco ; Paul M. Campbell ; Xiaojun Weng ; Joseph Stitt ; Mark A. Fanton ; Eric Frantz ; David Snyder ; Brenda L. VanMil ; Glenn G. Jernigan ; Rachael L. My
• 刊名：Nano Letters
• 出版年：2009
• 出版时间：August 12, 2009
• 年：2009
• 卷：9
• 期：8
• 页码：2873-2876
• 全文大小：235K
• 年卷期：v.9,no.8(August 12, 2009)
• ISSN：1530-6992

文摘

We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on SiC(0001) is highly dependent on thickness and monolayer strain uniformity. Additionally, we achieve high mobility epitaxial graphene (18100 cm²/(V s) at room temperature) on SiC(000) and show that carrier mobility depends strongly on the graphene layer stacking.