TaSi2 Nanowires: A Potential Field Emitter and Interconnect
详细信息 查看全文
- 作者：Yu-Lun Chueh ; Mong-Tzong Ko ; Li-Jen Chou ; Lih-Juann Chen ; Cen-Shawn Wu ; Chii-Dong Chen
- 刊名：Nano Letters
- 出版年：2006
- 出版时间：August 2006
- 年：2006
- 卷：6
- 期：8
- 页码：1637 - 1644
- 全文大小：1019K
- 年卷期：v.6,no.8(August 2006)
- ISSN：1530-6992
文摘
TaSi2 nanowires have been synthesized on a Si substrate by annealing NiSi2 films at 950 
C in an ambient containing Ta vapor. The nanowirescould be grown up to 13 
m in length. Field-emission measurements show that the turn-on field is low at 4-4.5 V/m and the threshold fieldis down to 6 V/m with the field enhancement factor as high as 1800. The metallic TaSi2 nanowires exhibit excellent electrical properties witha remarkable high failure current density of 3 × 108 A cm-2. In addition, effects of annealing temperatures and capability of metal silicidemediation layer on the growth of nanowires are addressed. This simple approach promises future applications in nanoelectronics and nano-optoelectronics.
C in an ambient containing Ta vapor. The nanowirescould be grown up to 13 m in length. Field-emission measurements show that the turn-on field is low at 4-4.5 V/m and the threshold fieldis down to 6 V/m with the field enhancement factor as high as 1800. The metallic TaSi2 nanowires exhibit excellent electrical properties witha remarkable high failure current density of 3 × 108 A cm-2. In addition, effects of annealing temperatures and capability of metal silicidemediation layer on the growth of nanowires are addressed. This simple approach promises future applications in nanoelectronics and nano-optoelectronics.