Photocurrents in a Single InAs Nanowire/Silicon Heterojunction

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• 作者：Andreas Brenneis ; Jan Overbeck ; Julian Treu ; Simon Hertenberger ; Stefanie Mork枚tter ; Markus D枚blinger ; Jonathan J. Finley ; Gerhard Abstreiter ; Gregor Koblm眉ller ; Alexander W. Holleitner
• 刊名：ACS Nano
• 出版年：2015
• 出版时间：October 27, 2015
• 年：2015
• 卷：9
• 期：10
• 页码：9849-9858
• 全文大小：868K
• ISSN：1936-086X

文摘

We investigate the optoelectronic properties of single indium arsenide nanowires, which are grown vertically on p-doped silicon substrates. We apply a scanning photocurrent microscopy to study the optoelectronic properties of the single heterojunctions. The measured photocurrent characteristics are consistent with an excess charge carrier transport through midgap trap states, which form at the Si/InAs heterojunctions. Namely, the trap states add an additional transport path across a heterojunction, and the charge of the defects changes the band bending at the junction. The bending gives rise to a photovoltaic effect at a small bias voltage. In addition, we observe a photoconductance effect within the InAs nanowires at large biases.