Vertical Heterostructure of Two-Dimensional MoS2 and WSe2 with Vertically Aligned Layers

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• 作者：Jung Ho Yu ; Hye Ryoung Lee ; Seung Sae Hong ; Desheng Kong ; Hyun-Wook Lee ; Haotian Wang ; Feng Xiong ; Shuang Wang ; Yi Cui
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：February 11, 2015
• 年：2015
• 卷：15
• 期：2
• 页码：1031-1035
• 全文大小：343K
• ISSN：1530-6992

文摘

Two-dimensional (2D) layered materials consist of covalently bonded 2D atomic layers stacked by van der Waals interactions. Such anisotropic bonding nature gives rise to the orientation-dependent functionalities of the 2D layered materials. Different from most studies of 2D materials with their atomic layers parallel to substrate, we have recently developed layer vertically aligned 2D material nanofilms. Built on these developments, here, we demonstrate the synthesis of vertical heterostructure of n-type MoS₂ and p-type WSe₂ with vertically aligned atomic layers. Thin film of MoS₂/WSe₂ vertical structure was successfully synthesized without significant alloy formation. The heterostructure synthesis is scalable to a large area over 1 cm². We demonstrated the pn junction diode behavior of the heterostructure device. This novel device geometry opens up exciting opportunities for a variety of electronic and optoelectronic devices, complementary to the recent interesting vertical heterostructures with horizontal atomic layers.