Low-Temperature Growth of Large-Area Heteroatom-Doped Graphene Film

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• 作者：Jia Zhang ; Junjie Li ; Zhenlong Wang ; Xiaona Wang ; Wei Feng ; Wei Zheng ; Wenwu Cao ; PingAn Hu
• 刊名：Chemistry of Materials
• 出版年：2014
• 出版时间：April 8, 2014
• 年：2014
• 卷：26
• 期：7
• 页码：2460-2466
• 全文大小：450K
• 年卷期：v.26,no.7(April 8, 2014)
• ISSN：1520-5002

文摘

Large-area heteroatom-doped graphene films are greatly attractive materials for various applications, such as electronics, fuel cells, and supercapacitors. Currently, these graphene films are prepared by the high-temperature chemical vapor deposition method, which produces a low doping level in N-doped graphene (NG) and fails in the synthesis of large-area S-doped graphene (SG) film. Here, we report a low-temperature method toward the synthesis of large-area heavily heteroatom-doped graphene on copper foils via a free radical reaction using polyhalogenated aromatic compounds. This low-temperature method allows the synthesis of single-layer NG film with a high nitrogen content, and the production of large-area SG film for the first time. Both doped graphenes show enhanced electrical properties in field effect transistors as well as high-performance electrocatalysts for fuel cells.