Unconventional Ribbon-Shaped β-Ga2O3 Tubes with Mobile Sn Nanowire Fillings

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• 作者：Junqing Hu ; Quan Li ; Jinhua Zhan ; Yang Jiao ; Zongwen Liu ; Simon P. Ringer ; Yoshio Bando ; Dmitri Golberg
• 刊名：ACS Nano
• 出版年：2008
• 出版时间：January 22, 2008
• 年：2008
• 卷：2
• 期：1
• 页码：107-112
• 全文大小：376K
• 年卷期：0
• ISSN：1936-086X

文摘

We report on the synthesis of novel, unconventional β-Ga₂O₃ tubes via a Sn nanowire template process using thermal decomposition and oxidation of SnO and GaN powder mixtures. Distinctly different from any previously reported nano- and microtubes, the present β-Ga₂O₃ tubes display a flattened and thin belt-like (or ribbon-like) morphology. Each ribbon-shaped tube has a width of ∼1–2 µm over its entire length, a length in the range of tens of micrometers, a thickness of ∼100–150 nm, and a uniform inner diameter of 30–120 nm. The tubes were either partially or completely filled with Sn nanowires, forming Sn/Ga₂O₃ metal−semiconductor nanowire heterostructures. A convergent electron beam generated in a transmission electron microscope is demonstrated to be an effective tool for delicate manipulation of encapsulated Sn nanowires. The Sn nanowires were gently cut apart (into two discrete fragments) and then completely separated and rejoined within Ga₂O₃ ribbon-shaped tubes. These unconventional β-Ga₂O₃ tubes not only should enrich the well-established bank of nanostructured morphologies and extend the understanding of crystal growth at the nanoscale but also may have promise for the design of electron-beam-irradiation- or thermo-driven electrical switches.