Boosting the Boron Dopant Level in Monolayer Doping by Carboranes
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- 作者：Liang Ye ; Ar谩ntzazu Gonz谩lez-Campo ; Rosario N煤帽ez ; Michel P. de Jong ; Tibor Kudernac ; Wilfred G. van der Wiel ; Jurriaan Huskens
- 刊名：ACS Applied Materials & Interfaces
- 出版年：2015
- 出版时间：December 16, 2015
- 年：2015
- 卷：7
- 期：49
- 页码：27357-27361
- 全文大小：289K
- ISSN：1944-8252
文摘
Monolayer doping (MLD) presents an alternative method to achieve silicon doping without causing crystal damage, and it has the capability of ultrashallow doping and the doping of nonplanar surfaces. MLD utilizes dopant-containing alkene molecules that form a monolayer on the silicon surface using the well-established hydrosilylation process. Here, we demonstrate that MLD can be extended to high doping levels by designing alkenes with a high content of dopant atoms. Concretely, carborane derivatives, which have 10 B atoms per molecule, were functionalized with an alkene group. MLD using a monolayer of such a derivative yielded up to ten times higher doping levels, as measured by X-ray photoelectron spectroscopy and dynamic secondary mass spectroscopy, compared to an alkene with a single B atom. Sheet resistance measurements showed comparably increased conductivities of the Si substrates. Thermal budget analyses indicate that the doping level can be further optimized by changing the annealing conditions.