Radio Frequency Transistors and Circuits Based on CVD MoS2

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• 作者：Atresh Sanne ; Rudresh Ghosh ; Amritesh Rai ; Maruthi Nagavalli Yogeesh ; Seung Heon Shin ; Ankit Sharma ; Karalee Jarvis ; Leo Mathew ; Rajesh Rao ; Deji Akinwande ; Sanjay Banerjee
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：August 12, 2015
• 年：2015
• 卷：15
• 期：8
• 页码：5039-5045
• 全文大小：458K
• ISSN：1530-6992

文摘

We report on the gigahertz radio frequency (RF) performance of chemical vapor deposited (CVD) monolayer MoS₂ field-effect transistors (FETs). Initial DC characterizations of fabricated MoS₂ FETs yielded current densities exceeding 200 渭A/渭m and maximum transconductance of 38 渭S/渭m. A contact resistance corrected low-field mobility of 55 cm²/(V s) was achieved. Radio frequency FETs were fabricated in the ground鈥搒ignal鈥揼round (GSG) layout, and standard de-embedding techniques were applied. Operating at the peak transconductance, we obtain short-circuit current-gain intrinsic cutoff frequency, f_T, of 6.7 GHz and maximum intrinsic oscillation frequency, f_max, of 5.3 GHz for a device with a gate length of 250 nm. The MoS₂ device afforded an extrinsic voltage gain A_v of 6 dB at 100 MHz with voltage amplification until 3 GHz. With the as-measured frequency performance of CVD MoS₂, we provide the first demonstration of a common-source (CS) amplifier with voltage gain of 14 dB and an active frequency mixer with conversion gain of 鈭?5 dB. Our results of gigahertz frequency performance as well as analog circuit operation show that large area CVD MoS₂ may be suitable for industrial-scale electronic applications.