Control of InAs Nanowire Growth Directions on Si

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• 作者：Katsuhiro Tomioka ; Junichi Motohisa ; Shinjiroh Hara ; Takashi Fukui
• 刊名：Nano Letters
• 出版年：2008
• 出版时间：October 8, 2008
• 年：2008
• 卷：8
• 期：10
• 页码：3475-3480
• 全文大小：318K
• 年卷期：v.8,no.10(October 8, 2008)
• ISSN：1530-6992

文摘

We report on control of growth directions of InAs nanowires on Si substrate. We achieved to integrate vertical InAs nanowires on Si by modifying initial Si(111) surface in selective-area metal-organic vapor phase epitaxy with flow-rate modulation mode at low temperature. Cross-sectional transmission electron microscope and Raman scattering showed that misfit dislocation with local strains were accommodated in the interface.