文摘
Self-ordered and structure-controlled transparent films oftin-modified mesoporous silica (Sn/Si ratio of 0.5-3%)were first prepared using a molecule surfactant templatemethod employing spin coating. A surface photovoltage(SPV) NO2 gas sensor was then fabricated using these self-ordered tin-modified mesoporous silica thin films basedon a metal-insulator-semiconductor structure. Highlysensitive tin-modified mesoporous silica was obtained thatcould detect NO2 gas concentrations of as low as 300 ppbat room temperature. The detection mechanism for NO2is believed to involve both the surface area, whichcontributes to the change in dielectric constant, and theamount of tin incorporated, which contributes to thechange in charge. It was found that, in this SPV sensor,the optimal Sn/Si ratio of 0.5% delivered record-highsensing performance.