Determination of High-Frequency Dielectric Constant and Surface Potential of Graphene Oxide and Influence of Humidity by Kelvin Probe Force Microscopy

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• 作者：Francisco C. Salom茫o ; Evandro M. Lanzoni ; Carlos A. Costa ; Christoph Deneke ; Eduardo B. Barros
• 刊名：Langmuir
• 出版年：2015
• 出版时间：October 20, 2015
• 年：2015
• 卷：31
• 期：41
• 页码：11339-11343
• 全文大小：314K
• ISSN：1520-5827

文摘

We use Kelvin probe force microscopy (KPFM) and capacitance coupling (dC/dz) to study the electrical properties of graphene oxide (GO). We propose using the dC/dz signal to probe the high frequency dielectric constant of mono- and few-layer GO. Our measurements suggest that the dynamic dielectric constant of GO is on the order of 蔚_GO 鈮?3.0 蔚₀, in the high frequency limit, and independent of the number of GO layers. The measurements are performed at a humidity controlled environment (5% of humidity). The effects of increasing humidity on both the dC/dz and KPFM measurements are analyzed.