Size-Dependence of Acceptor and Donor Levels of Boron and Phosphorus Codoped Colloidal Silicon Nanocrystals

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• 作者：Yusuke Hori ; Shinya Kano ; Hiroshi Sugimoto ; Kenji Imakita ; Minoru Fujii
• 刊名：Nano Letters
• 出版年：2016
• 出版时间：April 13, 2016
• 年：2016
• 卷：16
• 期：4
• 页码：2615-2620
• 全文大小：447K
• 年卷期：0
• ISSN：1530-6992

文摘

Size dependence of the boron (B) acceptor and phosphorus (P) donor levels of silicon (Si) nanocrystals (NCs) measured from the vacuum level was obtained in a very wide size range from 1 to 9 nm in diameter by photoemission yield spectroscopy and photoluminescence spectroscopy for B and P codoped Si-NCs. In relatively large Si-NCs, both levels are within the bulk Si band gap. The levels exhibited much smaller size dependence compared to the valence band and conduction band edges. The Fermi level of B and P codoped Si-NCs was also studied. It was found that the Fermi level of relatively large codoped Si-NCs is close to the valence band and it approaches the middle of the band gap with decreasing the size. The results suggest that below a certain size perfectly compensated Si-NCs, that is, Si-NCs with exactly the same number of active B and P, are preferentially grown, irrespective of average B and P concentrations in samples.