Low-Temperature, High-Performance Solution-Processed Thin-Film Transistors with Peroxo-Zirconium Oxide Dielectric

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• 作者：Jee Ho Park ; Young Bum Yoo ; Keun Ho Lee ; Woo Soon Jang ; Jin Young Oh ; Soo Sang Chae ; Hong Koo Baik
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2013
• 出版时间：January 23, 2013
• 年：2013
• 卷：5
• 期：2
• 页码：410-417
• 全文大小：511K
• 年卷期：v.5,no.2(January 23, 2013)
• ISSN：1944-8252

文摘

We demonstrated solution-processed thin film transistors on a peroxo-zirconium oxide (ZrO₂) dielectric with a maximum temperature of 350 掳C. The formation of ZrO₂ films was investigated by TG-DTA, FT-IR, and XPS analyses at various temperatures. We synthesized a zirconium oxide solution by adding hydrogen peroxide (H₂O₂). The H₂O₂ forms peroxo groups in the ZrO₂ film producing a dense-amorphous phase and a smooth surface film. Because of these characteristics, the ZrO₂ film successfully blocked leakage current even in annealing at 300 掳C. Finally, to demonstrate that the ZrO₂ film is dielectric, we fabricated thin-film transistors (TFTs) with a solution-processed channel layer of indium zinc oxide (IZO) on ZrO₂ films at 350 掳C. These TFTs had a mobility of 7.21 cm²/(V s), a threshold voltage (V_th) of 3.22 V, and a V_th shift of 1.6 V under positive gate bias stress.

Keywords:

solution process; peroxo-zirconium; thin-film transistor; hydrogen peroxide; indium zinc oxide; zirconium oxide