Effects of Solution Temperature on Solution-Processed High-Performance Metal Oxide Thin-Film Transistors
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- 作者：Keun Ho Lee ; Jee Ho Park ; Young Bum Yoo ; Woo Soon Jang ; Jin Young Oh ; Soo Sang Chae ; Kyeong Ju Moon ; Jae Min Myoung ; Hong Koo Baik
- 刊名：ACS Applied Materials & Interfaces
- 出版年：2013
- 出版时间：April 10, 2013
- 年：2013
- 卷：5
- 期：7
- 页码：2585-2592
- 全文大小：462K
- 年卷期：v.5,no.7(April 10, 2013)
- ISSN：1944-8252
文摘
Herein, we report a novel and easy strategy for fabricating solution-processed metal oxide thin-film transistors by controlling the dielectric constant of H2O through manipulation of the metal precursor solution temperature. As a result, indium zinc oxide (IZO) thin-film transistors (TFTs) fabricated from IZO solution at 4 掳C can be operated after annealing at low temperatures (250 掳C). In contrast, IZO TFTs fabricated from IZO solutions at 25 and 60 掳C must be annealed at 275 and 300 掳C, respectively. We also found that IZO TFTs fabricated from the IZO precursor solution at 4 掳C had the highest mobility of 12.65 cm2/(V s), whereas the IZO TFTs fabricated from IZO precursor solutions at 25 and 60 掳C had field-effect mobility of 5.39 and 4.51 cm2/(V s), respectively, after annealing at 350 掳C. When the IZO precursor solution is at 4 掳C, metal cations such as indium (In3+) and zinc ions (Zn2+) can be fully surrounded by H2O molecules, because of the higher dielectric constant of H2O at lower temperatures. These chemical complexes in the IZO precursor solution at 4 掳C are advantageous for thermal hydrolysis and condensation reactions yielding a metal oxide lattice, because of their high potential energies. The IZO TFTs fabricated from the IZO precursor solution at 4 掳C had the highest mobility because of the formation of many metal鈥搊xygen鈥搈etal (M-O-M) bonds under these conditions. In these bonds, the ns-orbitals of the metal cations overlap each other and form electron conduction pathways. Thus, the formation of a high proportion of M-O-M bonds in the IZO thin films is advantageous for electron conduction, because oxide lattices allow electrons to travel easily through the IZO.