Oxidation and Reduction of Ultrathin Nanocrystalline Ru Films on Silicon: Model System for Ru-Capped Extreme Ultraviolet Lithography Optics
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- 作者：Y. B. He ; A. Goriachko ; C. Korte ; A. Farkas ; G. Mellau ; P. Dudin ; L. Gregoratti ; A. Barinov ; M. Kiskinova ; A. Stierle ; N. Kasper ; S. Bajt ; H. Over
- 刊名：Journal of Physical Chemistry C
- 出版年：2007
- 出版时间：July 26, 2007
- 年：2007
- 卷：111
- 期：29
- 页码：10988 - 10992
- 全文大小：232K
- 年卷期：v.111,no.29(July 26, 2007)
- ISSN：1932-7455
文摘
Ultrathin ruthenium films are promising capping layers protecting extreme ultraviolet lithography optics againstcarbon growth and oxidation. The structure and reactivity of 2, 5, and 7 nm thick nanocrystalline Ru filmson Si (serving as a model system for Ru capping layers) were studied by multiple techniques including scanningelectron microscopy, X-ray diffraction, X-ray reflectivity, and X-ray photoelectron spectroscopy. The structuralanalysis indicated dense and flat Ru films, consisting of preferentially (0001)-oriented grains. High resolutioncore-level Ru 3d5/2 and O 1s spectroscopy studies have revealed that these Ru films exposed to O2 ambientare resistant to oxidation up to ~470 K similar to the oxidation of single-crystalline Ru(0001) surfaces. Thereduction of the oxide in the H2 ambient is highly effective and proceeds already below 370 K.