From InSb Nanowires to Nanocubes: Looking for the Sweet Spot

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• 作者：S茅bastien R. Plissard ; Dorris R. Slapak ; Marcel A. Verheijen ; Mo茂ra Hocevar ; George W. G. Immink ; Ilse van Weperen ; Stevan Nadj-Perge ; Sergey M. Frolov ; Leo P. Kouwenhoven ; Erik P. A. M. Bakkers
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：April 11, 2012
• 年：2012
• 卷：12
• 期：4
• 页码：1794-1798
• 全文大小：311K
• 年卷期：v.12,no.4(April 11, 2012)
• ISSN：1530-6992

文摘

High aspect ratios are highly desired to fully exploit the one-dimensional properties of indium antimonide nanowires. Here we systematically investigate the growth mechanisms and find parameters leading to long and thin nanowires. Variation of the V/III ratio and the nanowire density are found to have the same influence on the 鈥渓ocal鈥?growth conditions and can control the InSb shape from thin nanowires to nanocubes. We propose that the V/III ratio controls the droplet composition and the radial growth rate and these parameters determine the nanowire shape. A sweet spot is found for nanowire interdistances around 500 nm leading to aspect ratios up to 35. High electron mobilities up to 3.5 脳 10p>4p> cmp>2p> Vp>鈥?聽p>sp>鈥?p> enable the realization of complex spintronic and topological devices.

Keywords:

Nanowire; nanocubes; InSb; growth mechanisms; arrays; mobility