Immersion Deposition of Metal Films on Silicon and Germanium Substrates in Supercritical Carbon Dioxide

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• 作者：Xiang R. Ye ; Chien M. Wai ; Daqing Zhang ; Yanko Kranov ; David N. McIlroy ; Yuehe Lin ; and Mark Engelhard
• 刊名：Chemistry of Materials
• 出版年：2003
• 出版时间：January 14, 2003
• 年：2003
• 卷：15
• 期：1
• 页码：83 - 91
• 全文大小：371K
• 年卷期：v.15,no.1(January 14, 2003)
• ISSN：1520-5002

文摘

A low-temperature CO₂-based technology, supercritical fluid immersion deposition (SFID),has been developed for producing Pd, Cu, Ag, or other metal films on Si-based substrates insupercritical CO₂ solutions. The reaction is most likely initiated by oxidation of elementalsilicon to SiF₄ or H₂SiF₆ with HF, causing the reduction of a metal chelate precursor to themetallic form on silicon surface in CO₂. Using this method, only the substrate surfacesexposed to CO₂ solutions are coated with metals, and the metal films (Pd, Cu, and Ag) exhibitgood coverage, smooth and dense texture, and high purity. Preliminary experiment indicatesthat palladium films deposited on silicon by SFID can be converted to palladium silicide byannealing treatment. Metal films can also be deposited onto germanium substrates usingSFID. The gaslike properties and high pressure of the supercritical fluids, combined withthe low reaction temperature, make this SFID method potentially useful for fabricating thinfilms of metal or metal silicide in small features, which is difficult to accomplish byconventional metal deposition methods.