Ambipolar Field Effect in Sb-Doped Bi2Se3 Nanoplates by Solvothermal Synthesis

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• 作者：Desheng Kong ; Kristie J. Koski ; Judy J. Cha ; Seung Sae Hong ; Yi Cui
• 刊名：Nano Letters
• 出版年：2013
• 出版时间：February 13, 2013
• 年：2013
• 卷：13
• 期：2
• 页码：632-636
• 全文大小：310K
• 年卷期：v.13,no.2(February 13, 2013)
• ISSN：1530-6992

文摘

A topological insulator is a new phase of quantum matter with a bulk band gap and spin-polarized surface states, which might find use in applications ranging from electronics to energy conversion. Despite much exciting progress in the field, high-yield solution synthesis has not been widely used for the study of topological insulator behavior. Here, we demonstrate that solvothermally synthesized Bi₂Se₃ nanoplates are attractive for topological insulator studies. The carrier concentration of these Bi₂Se₃ nanoplates is controlled by compensational Sb doping during the synthesis. In low-carrier-density, Sb-doped Bi₂Se₃ nanoplates, we observe pronounced ambipolar field effect that demonstrates the flexible manipulation of carrier type and concentration for these nanostructures. Solvothermal synthesis offers an affordable, facile approach to produce high-quality nanomaterials to explore the properties of topological insulators.

Keywords:

Topological insulator; solvothermal synthesis; Bi₂Se₃ nanoplate; ambipolar field effect; Sb doping; low carrier density