One-Dimensional Semiconductor Nanostructure Based Thin-Film Partial Composite Formed by Transfer Implantation for High-Performance Flexible and Printable Electronics at Low Temperature

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• 作者：Kyeong-Ju Moon ; Tae-Il Lee ; Ji-Hyuk Choi ; Joohee Jeon ; Youn Hee Kang ; Jyoti Prakash Kar ; Jung Han Kang ; Ilgu Yun ; Jae-Min Myoung
• 刊名：ACS Nano
• 出版年：2011
• 出版时间：January 25, 2011
• 年：2011
• 卷：5
• 期：1
• 页码：159-164
• 全文大小：325K
• 年卷期：0
• ISSN：1936-086X

文摘

Having high bending stability and effective gate coupling, the one-dimensional semiconductor nanostructures (ODSNs)-based thin-film partial composite was demonstrated, and its feasibility was confirmed through fabricating the Si NW thin-film partial composite on the poly(4-vinylphenol) (PVP) layer, obtaining uniform and high-performance flexible field-effect transistors (FETs). With the thin-film partial composite optimized by controlling the key steps consisting of the two-dimensional random dispersion on the hydrophilic substrate of ODSNs and the pressure-induced transfer implantation of them into the uncured thin dielectric polymer layer, the multinanowire (NW) FET devices were simply fabricated. As the NW density increases, the on-current of NW FETs increases linearly, implying that uniform NW distribution can be obtained with random directions over the entire region of the substrate despite the simplicity of the drop-casting method. The implantation of NWs by mechanical transfer printing onto the PVP layer enhanced the gate coupling and bending stability. As a result, the enhancements of the field-effect mobility and subthreshold swing and the stable device operation up to a 2.5 mm radius bending situation were achieved without an additional top passivation.