New Top-Down Approach for Fabricating High-Aspect-Ratio Complex Nanostructures with 10 nm Scale Features
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- 作者：Hwan-Jin Jeon ; Kyoung Hwan Kim ; Youn-Kyoung Baek ; Dae Woo Kim ; Hee-Tae Jung
- 刊名：Nano Letters
- 出版年：2010
- 出版时间：September 8, 2010
- 年：2010
- 卷：10
- 期：9
- 页码：3604-3610
- 全文大小：647K
- 年卷期：v.10,no.9(September 8, 2010)
- ISSN：1530-6992
文摘
We describe a new patterning technique, named “secondary sputtering lithography” that enables fabrication of ultrahigh-resolution (ca. 10 nm) and high aspect ratio (ca. 15) patterns of three-dimensional various shapes. In this methodology, target materials are etched and deposited onto the side surface of a prepatterned polymer by using low Ar ion bombarding energies, based on the angular distribution of target particles by ion-beam bombardment. After removal of the prepatterned polymer, high aspect ratios and high-resolution patterns of target materials are created.