Growth and Characterization of Tin Disulfide Single Crystals

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• 作者：Laura Sharp ; David Soltz ; and B. A. Parkinson
• 刊名：Crystal Growth & Design
• 出版年：2006
• 出版时间：June 2006
• 年：2006
• 卷：6
• 期：6
• 页码：1523 - 1527
• 全文大小：119K
• 年卷期：v.6,no.6(June 2006)
• ISSN：1528-7505

文摘

Tin disulfide is a layered semiconductor, crystallizing in the cadmium iodide structure, with a band gap of 2.2 eV.The layered structure makes it useful for many experiments where a semiconductor with a reproducible renewable surface is needed.The easy cleavage of the surface exposes a clean atomically flat surface for use as a substrate for the deposition of solid-statematerials or molecules or scanning probe microscopy experiments. Its semiconducting properties are also useful for photoelectrochemical dye sensitization studies. We report the crystal growth of this material by a Bridgman method with control of the dopantidentity and level to obtain useful n-type semiconducting properties. Doping levels measured with both Hall effect and Mott Schottkyanalysis were well correlated. The electron mobility and hole diffusion lengths were also measured for the various doped crystalsusing solid-state and photoelectrochemical techniques.