Structure Transition Mechanism of Single-Crystalline Silicon, g-C3N4, and Diamond Nanocone Arrays Synthesized by Plasma Sputtering Reaction Deposition

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• 作者：Zhuoqi Xu ; Leilei Guan ; Hui Li ; Jian Sun ; Zhifeng Ying ; Jiada Wu ; Ning Xu
• 刊名：Journal of Physical Chemistry C
• 出版年：2015
• 出版时间：December 31, 2015
• 年：2015
• 卷：119
• 期：52
• 页码：29062-29070
• 全文大小：607K
• ISSN：1932-7455

文摘

Single-crystalline silicon, g-C₃N₄, and diamond nanocone arrays were synthesized on nickel-covered silicon (100) substrates by a novel method of plasma sputtering reaction deposition. The experimental results show that the morphologies, structures, and composition of the as-grown nanocones strongly depend on the ratios of the inlet mixed gases. The silicon, g-C₃N₄, and diamond nanocone arrays could be grown at the CH₄/(N₂ + H₂) ratios of about 1/20–1/10, 1/150–1/60, and 0, respectively. The analyses of the optical emission spectra from the discharged plasma indicate that the inlet methane controls the growth of the nanocones by suppressing the H⁺-sputtering effect to adjust the amounts of the silicon, carbon, and nitrogen atoms attaining the substrate, which determines the composition, structures, and crystallinity of the grown nanocones.