An impro
ved process for graphene transfer was used to demonstrate high performance graphene enabled
vertical organic field effect transistors (G-VFETs). The process reduces disorder and eliminates the polymeric residue that typically plagues transferred films. The method also allows for purposely creating pores in the graphene of a controlled areal density. Transconductance obser
ved in G-VFETs fabricated with a continuous (pore-free) graphene source electrode is attributed to modulation of the contact barrier height between the graphene and organic semiconductor due to a gate field induced Fermi le
vel shift in the low density of electronic-states graphene electrode. Pores introduced in the graphene source electrode are shown to boost the G-VFET performance, which scales with the areal pore density taking ad
vantage of both barrier height lowering and tunnel barrier thinning. De
vices with areal pore densities of 20% exhibit on/off ratios and output current densities exceeding 10
6 and 200 mA/cm
2, respecti
vely, at drain
voltages below 5 V.
Keywords:
graphene; transparent electrode; vertical+field+effect+transistor&qsSearchArea=searchText">vertical field effect transistor; organic transistors