Effects of a Novel Disulfide Bond and Engineered Electrostatic Interactions on the Thermostability of Azurin
详细信息    查看全文
文摘
Identification and evaluation of factors important for thermostability in proteins is a growingresearch field with many industrial applications. This study investigates the effects of introducing a noveldisulfide bond and engineered electrostatic interactions with respect to the thermostability of holo azurinfrom Pseudomonas aeruginosa. Four mutants were selected on the basis of rational design and noveltemperature-dependent atomic displacement factors from crystal data collected at elevated temperatures.The atomic displacement parameters describe the molecular movement at higher temperatures. Thethermostability was evaluated by optical spectroscopy as well as by differential scanning calorimetry.Although azurin has a high inherent stability, the introduction of a novel disulfide bond connecting aflexible loop with small -helix (D62C/K74C copper-containing mutant), increased the Tm by 3.7 Ccompared with the holo protein. Furthermore, three mutants were designed to introduce electrostaticinteractions, K24R, D23E/K128R, and D23E/K128R/K24R. Mutant K24R stabilizes loops between twoseparate beta2.gif" BORDER=0 ALIGN="middle">-strands and D23E/K128R was selected to stabilize the C-terminus of azurin. Furthermore,D23E/K128R/K24R was selected to reflect the combination of the electrostatic interactions in D23E/K128R and K24R. The mutants involving electrostatic interactions had a minor effect on the thermostability.The crystal structures of the copper-containing mutants D62C/K74C and K24R have been determined to1.5 and 1.8 Å resolution. In addition the crystal structure of the zinc-loaded mutant D62C/K74C has alsobeen completed to 1.8 Å resolution. These structures support the selected design and provide valuableinformation for evaluating effects of the modifications on the thermostability of holo azurin.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700