Cu2O Homojunction Solar Cells: F-Doped N-type Thin Film and Highly Improved Efficiency

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• 作者：Luo Yu ; Liangbin Xiong ; Ying Yu
• 刊名：Journal of Physical Chemistry C
• 出版年：2015
• 出版时间：October 8, 2015
• 年：2015
• 卷：119
• 期：40
• 页码：22803-22811
• 全文大小：608K
• ISSN：1932-7455

文摘

Herein, F-doped Cu₂O thin films with different F content are first synthesized on the ITO glass via a simple electrochemical deposition method. The prepared F-doped Cu₂O thin films present n-type semiconductor character and show significantly high electronic and optical properties, especially for the one with preparation molar ratio of F/Cu = 1:2. This sample owns a unique net microstructure for a best absorption of visible-light and its electron concentration is more than ten times as that of pure Cu₂O. Additionally, it has a lowest resistivity, which is beneficial for photogenerated charge transfer and the decrease of electron鈥揾ole pair recombination. The F-doped Cu₂O films are utilized to fabricate Cu₂O homojunction solar cells by consecutive electrochemical depositions. The conversion efficiency of the best homojunction solar cell with the F-doped Cu₂O as n-type layer is nearly eight times as that with pure Cu₂O as n-type layer. Hence, this study provides a strategy to improve the properties of Cu₂O thin films through F ion doping. The application of F-doped Cu₂O to homojunction solar cell will shed light on the development of another cheap and environmentally friendly solar cell.