Structural, Magnetic, and Magnetoresistive Properties of Electrodeposited Ni5Zn21 Alloy Nanowires

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• 作者：Lifeng Liu ; Huanfang Tian ; Sishen Xie ; Weiya Zhou ; Shicheng Mu ; Li Song ; Dongfang Liu ; Shudong Luo ; Zengxing Zhang ; Yanjuan Xiang ; Xiaowei Zhao ; Wenjun Ma ; Jun Shen ; Jianqi Li ; Chaoying Wang ; Gang Wang
• 刊名：Journal of Physical Chemistry B
• 出版年：2006
• 出版时间：October 19, 2006
• 年：2006
• 卷：110
• 期：41
• 页码：20158 - 20165
• 全文大小：684K
• 年卷期：v.110,no.41(October 19, 2006)
• ISSN：1520-5207

文摘

Ni₅Zn₂₁ alloy nanowires were fabricated through template-assisted electrochemical deposition method. Themorphology and microstructures of as-deposited nanowires were determined by field-emission scanning electronmicroscope (FE-SEM), X-ray diffraction (XRD), high-resolution transmission electron microscope (HRTEM),electron diffraction (ED), and electron probe microanalysis (EPMA). The accurate composition was measuredvia induced coupling plasma atomic emission spectroscopy. SEM results show that Ni₅Zn₂₁ nanowires aredeposited in most of the nanopores of the template, and they are continuous and dense throughout the wholelength. The XRD result demonstrates that the nanowires are mainly composed of a cubic mages/gifchars/gamma.gif" BORDER=0 > phase Ni₅Zn₂₁alloy, but there also exists a trace of Zn-rich mages/gifchars/eta.gif" BORDER=0 > phase. HRTEM and ED reveal that the alloy nanowires arepolycrystalline with the crystallite size of several tens of nanometers. EPMA of a single nanowire illustratesthat there exist Ni-rich microzones in as-deposited nanowires. Subsequent magnetic measurements of thearray also confirmed the existence of them. In addition, it can be further inferred that the shape of Ni-richmicrozones is probably barlike or disklike, from the anisotropy of zero field cooling/field cooling (ZFC/FC)curves as well as the vortex magnetization behavior of the Ni₅Zn₂₁ nanowire array. The low-temperaturemagnetoresistance of the Ni₅Zn₂₁ nanowire array was also measured. Giant magnetoresistance instead ofanisotropic magnetoresistance is suggested to be responsible for contributing to the magnetoresistance.