Using MCM-48 microspheres (MMS) as the support, GaN nanotubes, with branched tubules and encapsulatedcrystalline GaN nanoparticles, have been prepared by the reaction of GaCl
3 with excess NaN
3 in dry benzenesolution. The key steps in our approach are as follows: (1) by stirring at low-temperature of 40
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C for 12 h,the starting materials are adsorbed on the MMS surface with the occurrence of in-situ gallium azide precursor;(2) at higher temperature, under the reduction of active sodium atoms (Na*) derived from the decompositionof surplus NaN
3, liquid Ga droplets occur acting as catalytic centers for the growth of GaN nanotubes; (3) atthe same time, small GaN nanoparticles, accompanying tube growth, are captured into the tube due to thecapillarity-induced filling. Based on the solution-liquid-solid (SLS) model and hodograph concept, a SLS-induced tip-growth mechanism for the formation of filled-GaN nanotubes on MMS is proposed. The newnanostructures presented here enrich the nanoscale community with structural complexity and enable greaterpotential applications.