Scalable Patterning of One-Dimensional Dangling Bond Rows on Hydrogenated Si(001)

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• 作者：Fran莽ois Bianco ; David R. Bowler ; James H. G. Owen ; Sigrun A. K枚ster ; Maria Longobardi ; Christoph Renner
• 刊名：ACS Nano
• 出版年：2013
• 出版时间：May 28, 2013
• 年：2013
• 卷：7
• 期：5
• 页码：4422-4428
• 全文大小：507K
• 年卷期：v.7,no.5(May 28, 2013)
• ISSN：1936-086X

文摘

Silicon dangling bonds exposed on the monohydride silicon (001) (Si(001):H) surface are highly reactive, thus enabling site-selective absorption of atoms and single molecules into custom patterns designed through the controlled removal of hydrogen atoms. Current implementations of high-resolution hydrogen lithography on the Si(001):H surface rely on sequential removal of hydrogen atoms using the tip of a scanning probe microscope. Here, we present a scalable thermal process that yields very long rows of single dimer wide silicon dangling bonds suitable for self-assembly of atoms and molecules into one-dimensional structures of unprecedented length on Si(001):H. The row consists of the standard buckled Si dimer and an unexpected flat dimer configuration.
<h4>Keywords: h4> scanning tunneling microscopy; scanning probe lithography; self-assembly; one-dimensional; dangling bond; silicon; dimer