Quantification of the Void Volume in Single-Crystal Silicon

详细信息    查看全文

• 作者：Giancarlo D’Agostino ; Marco Di Luzio ; Giovanni Mana ; Luca Martino ; Massimo Oddone ; Carlo Paolo Sasso
• 刊名：Analytical Chemistry
• 出版年：2016
• 出版时间：December 6, 2016
• 年：2016
• 卷：88
• 期：23
• 页码：11678-11683
• 全文大小：301K
• ISSN：1520-6882

文摘

This paper investigates the use of a method based on Cu decoration and neutron activation to determine the total volume of voids in a silicon single crystal. A measurement protocol was developed and tested in an experiment carried out with a 5 cm³ volume and 10 g mass high-purity natural silicon sample. The few percent uncertainty reached in the determination of the Cu concentration, at a 10¹⁴ cm^–3 level, makes this method a candidate to set an upper limit to the concentration of the vacancies contributing to the void volume in the enriched silicon material used to determine the Avogadro constant.