用户名: 密码: 验证码:
Atomically Thin-Layered Molybdenum Disulfide (MoS2) for Bulk-Heterojunction Solar Cells
详细信息    查看全文
文摘
Transition metal dichalcogenides (TMDs) are becoming significant because of their interesting semiconducting and photonic properties. In particular, TMDs such as molybdenum disulfide (MoS<sub>2sub>), molybdenum diselenide (MoSe<sub>2sub>), tungsten disulfide (WS<sub>2sub>), tungsten diselenide (WSe<sub>2sub>), titanium disulfide (TiS<sub>2sub>), tantalum sulfide (TaS<sub>2sub>), and niobium selenide (NbSe<sub>2sub>) are increasingly attracting attention for their applications in solar cell devices. In this review, we give a brief introduction to TMDs with a focus on MoS<sub>2sub>; and thereafter, emphasize the role of atomically thin MoS<sub>2sub> layers in fabricating solar cell devices, including bulk-heterojunction, organic, and perovskites-based solar cells. Layered MoS<sub>2sub> has been used as the hole-transport layer (HTL), electron-transport layer (ETL), interfacial layer, and protective layer in fabricating heterojunction solar cells. The trilayer graphene/MoS<sub>2sub>/n-Si solar cell devices exhibit a power-conversion efficiency of 11.1%. The effects of plasma and chemical doping on the photovoltaic performance of MoS<sub>2sub> solar cells have been analyzed. After doping and electrical gating, a power-conversion efficiency (PCE) of 9.03% has been observed for the MoS<sub>2sub>/h-BN/GaAs heterostructure solar cells. The MoS<sub>2sub>-containing perovskites-based solar cells show a PCE as high as 13.3%. The PCE of MoS<sub>2sub>-based organic solar cells exceeds 8.40%. The stability of MoS<sub>2sub> solar cells measured under ambient conditions and light illumination has been discussed. The MoS<sub>2sub>-based materials show a great potential for solar cell devices along with high PCE; however, in this connection, their long-term environmental stability is also of equal importance for commercial applications.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700