Localized Deoxygenation and Direct Patterning of Graphene Oxide Films by Focused Ion Beams

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• 作者：Derrek E. Lobo ; Jing Fu ; Thomas Gengenbach ; Mainak Majumder
• 刊名：Langmuir
• 出版年：2012
• 出版时间：October 16, 2012
• 年：2012
• 卷：28
• 期：41
• 页码：14815-14821
• 全文大小：395K
• 年卷期：v.28,no.41(October 16, 2012)
• ISSN：1520-5827

文摘

Exposure to controlled doses (4.65 脳 10^鈥? to 2.79 脳 10^鈥? nC/渭m² ion fluence) of Ga ions via a focused ion beam (FIB) deoxygenates graphene oxide (GO) and increases the electrical conductivity in 100 脳 100 渭m² patches by several orders of magnitude compared to that in unexposed GO. Raman spectra and the carbon/oxygen ratio in exposed areas are indicative of chemically reduced graphene oxide (rGO). This novel FIB-induced conversion technique is harnessed for the direct imprinting of complex micrometer-scale shapes and sub-20-nm lines of rGO in insulating films and flakes of GO establishing the capability of generating features varying in size from approximately tens of nanometers to approximately hundreds of micrometers in a maskless, efficient manner.