Effect of Water Layer at the SiO2/Graphene Interface on Pentacene Morphology

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• 作者：Manisha Chhikara ; Egon Pavlica ; Aleksandar Matkovi膰 ; Rado拧 Gaji膰 ; Gvido Bratina
• 刊名：Langmuir
• 出版年：2014
• 出版时间：October 7, 2014
• 年：2014
• 卷：30
• 期：39
• 页码：11681-11688
• 全文大小：445K
• ISSN：1520-5827

文摘

Atomic force microscopy has been used to examine early stages of pentacene growth on exfoliated single-layer graphene transferred to SiOb>2b> substrates. We have observed 2D growth with mean height of 1.5 卤 0.2 nm on as-transferred graphene. Three-dimensional islands of pentacene with an average height of 11 卤 2 nm were observed on graphene that was annealed at 350 掳C prior to pentacene growth. Compellingly similar 3D morphology has been observed on graphene transferred onto SiOb>2b> that was treated with hexamethyldisilazane prior to the transfer of graphene. On multilayer graphene we have observed 2D growth, regardless of the treatment of SiOb>2b>. We interpret this behavior of pentacene molecules in terms of the influence of the dipolar field that emerges from the water monolayer at the graphene/SiOb>2b> interface on the surface energy of graphene.