Thin-Film Copper Indium Gallium Selenide Solar Cell Based on Low-Temperature All-Printing Process
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- 作者：Manjeet Singh ; Jinting Jiu ; Tohru Sugahara ; Katsuaki Suganuma
- 刊名：ACS Applied Materials & Interfaces
- 出版年：2014
- 出版时间：September 24, 2014
- 年：2014
- 卷：6
- 期：18
- 页码：16297-16303
- 全文大小：377K
- ISSN：1944-8252
文摘
In the solar cell field, development of simple, low-cost, and low-temperature fabrication processes has become an important trend for energy-saving and environmental issues. Copper indium gallium selenide (CIGS) solar cells have attracted much attention due to the high absorption coefficient, tunable band gap energy, and high efficiency. However, vacuum and high-temperature processing in fabrication of solar cells have limited the applications. There is a strong need to develop simple and scalable methods. In this work, a CIGS solar cell based on all printing steps and low-temperature annealing is developed. CIGS absorber thin film is deposited by using dodecylamine-stabilized CIGS nanoparticle ink followed by printing buffer layer. Silver nanowire (AgNW) ink and sol鈥揼el-derived ZnO precursor solution are used to prepare a highly conductive window layer ZnO/[AgNW/ZnO] electrode with a printing method that achieves 16 惟/sq sheet resistance and 94% transparency. A CIGS solar cell based on all printing processes exhibits efficiency of 1.6% with open circuit voltage of 0.48 V, short circuit current density of 9.7 mA/cm2, and fill factor of 0.34 for 200 nm thick CIGS film, fabricated under ambient conditions and annealed at 250 掳C.