Etching of GaAs(100) with Aqueous Ammonia Solution: A Synchrotron-Photoemission Spectroscopy Study

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• 作者：Mikhail V. Lebedev ; Eric Mankel ; Thomas Mayer ; Wolfram Jaegermann
• 刊名：Journal of Physical Chemistry C
• 出版年：2010
• 出版时间：December 16, 2010
• 年：2010
• 卷：114
• 期：49
• 页码：21385-21389
• 全文大小：284K
• 年卷期：v.114,no.49(December 16, 2010)
• ISSN：1932-7455

文摘

Etching of the GaAs(100) surface with aqueous ammonia solution is studied by highly surface-sensitive synchrotron-radiation photoemission spectroscopy. It is shown that such treatment effectively removes the native oxide layer leaving the surface covered with elemental arsenic, as well as arsenic hydroxides AsOH and As(OH)₃, gallium hydroxide GaOH, and gallium suboxide Ga_xO. After annealing of the surface at 500 °C, the arsenic and gallium hydroxides disappear, while the excess arsenic is dimerized. The residual carbon contamination prevents disappearance of gallium hydroxide and hinders dimerization of excess arsenic on annealing. Rinsing the etched surface with 2-propanol instead of water prior to annealing results in considerable reduction of carbon contamination after annealing.