Thin films of a nearly symmetric lamellae-forming diblock copolymer of poly(styrene-
b-methylmethacrylate) (PS-
b-PMMA) having a bulk repeat period,
LO,
were directed to assemble vertically a
way fromchemically nanopatterned striped substrates (having a periodicity
LS) that consisted of alternating stripes that
were preferentially
wet by the t
wo blocks of the copolymer. The relative
widths of the adjacent stripes
weresystematically varied such that the normalized line
width of the chemical surface pattern, defined as the
width ofthe stripe that
was
wet by the styrene block of the block copolymer,
W, divided by the constant chemical surfacepattern period,
Ls had values bet
ween 0.30
and 0.65. On chemical surface patterns
with
LS
LO the diblockcopolymer domains formed defect-free perpendicular arrays if the normalized line
width
W/
LS,
was bet
ween0.36
and 0.63. On chemical surface patterns
with
LS
LO, the range of
W/
LS capable of inducing defect freearrays decreased as the difference bet
ween
LS and LO increased. Single-chain-in-mean-field (SCMF) simulationsprovided information on the dimensions
and shapes of the block copolymer domains. The SCMF simulationsindicated that the
widths of the lamellae at half film thickness
were 0.47
LS independent of
W/
LS and the angleof the interface bet
ween the vertically oriented domains remained
within 11
![](/images/entities/deg.gif)
of the substrate normal over therange of experimentally relevant values of
W/
LS.