Three-Dimensional Morphology of GaP-GaAs Nanowires Revealed by Transmission Electron Microscopy Tomography
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- 作者：Marcel A. Verheijen ; Rienk E. Algra ; Magnus T. Borgströ ; m ; George Immink ; Erwan Sourty ; Willem J. P. van Enckevort ; Elias Vlieg ; Erik P. A. M. Bakkers
- 刊名：Nano Letters
- 出版年：2007
- 出版时间：October 2007
- 年：2007
- 卷：7
- 期：10
- 页码：3051 - 3055
- 全文大小：245K
- 年卷期：v.7,no.10(October 2007)
- ISSN：1530-6992
文摘
We have investigated the morphology of heterostructured GaP-GaAs nanowires grown by metal-organic vapor-phase epitaxy as a functionof growth temperature and V/III precursor ratio. The study of heterostructured nanowires with transmission electron microscopy tomographyallowed the three-dimensional morphology to be resolved, and discrimination between the effect of axial (core) and radial (shell) growth onthe morphology. A temperature- and precursor-dependent structure diagram for the GaP nanowire core morphology and the evolution of thedifferent types of side facets during GaAs and GaP shell growth were constituted.