Atomic Layer Deposition of Antimony and its Compounds Using Dechlorosilylation Reactions of Tris(triethylsilyl)antimony

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• 作者：Viljami Pore ; Kjell Knapas ; Timo Hatanp盲盲 ; Tiina Sarnet ; Marianna Kemell ; Mikko Ritala ; Markku Leskel盲 ; Kenichiro Mizohata
• 刊名：Chemistry of Materials
• 出版年：2011
• 出版时间：January 25, 2011
• 年：2011
• 卷：23
• 期：2
• 页码：247-254
• 全文大小：888K
• 年卷期：v.23,no.2(January 25, 2011)
• ISSN：1520-5002

文摘

For the first time an element other than a metal was deposited by atomic layer deposition (ALD). Pure and conformal thin films of elemental antimony were prepared by ALD using SbCl₃ and (Et₃Si)₃Sb as precursors. In situ reaction mechanism studies showed that the dehalosilylation reactions involved are very efficient in eliminating the ligands from the growing surface enabling the use of low growth temperatures down to 95 掳C. Various antimony compounds, such as GeSb, Sb₂Te, GaSb, and AlSb, can also be deposited by reacting (Et₃Si)₃Sb with other metal halides or mixing Sb growth cycles with other ALD processes. The new antimony ALD process is a major step in the realization of non-volatile phase change random access memories (PCRAM) and ALD of III鈭扸 compounds.