Reliable Control of Filament Formation in Resistive Memories by Self-Assembled Nanoinsulators Derived from a Block Copolymer

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• 作者：Byoung Kuk You ; Woon Ik Park ; Jong Min Kim ; Kwi-Il Park ; Hyeon Kook Seo ; Jeong Yong Lee ; Yeon Sik Jung ; Keon Jae Lee
• 刊名：ACS Nano
• 出版年：2014
• 出版时间：September 23, 2014
• 年：2014
• 卷：8
• 期：9
• 页码：9492-9502
• 全文大小：872K
• ISSN：1936-086X

文摘

Resistive random access memory (ReRAM) is a promising candidate for future nonvolatile memories. Resistive switching in a metal鈥搃nsulator鈥搈etal structure is generally assumed to be caused by the formation/rupture of nanoscale conductive filaments (CFs) under an applied electric field. The critical issue of ReRAM for practical memory applications, however, is insufficient repeatability of the operating voltage and resistance ratio. Here, we present an innovative approach to reliably and reproducibly control the CF growth in unipolar NiO resistive memory by exploiting uniform formation of insulating SiO_x nanostructures from the self-assembly of a Si-containing block copolymer. In this way, the standard deviation (SD) of set and reset voltages was markedly reduced by 76.9% and 59.4%, respectively. The SD of high resistance state also decreased significantly, from 6.3 脳 10⁷ 惟 to 5.4 脳 10⁴ 惟. Moreover, we report direct observations of localized metallic Ni CF formation and their controllable growth using electron microscopy and discuss electrothermal simulation results based on the finite element method supporting our analysis results.

Keywords:

block copolymers; self-assembly; resistive memory; conductive filament