文摘
Epitaxial growth of a highly strained, coherent SiGe alloy shell around a Ge nanowire core is investigated as a method to achieve surface passivation and carrier confinement, important in realizing nanowire devices. The high photoluminescence intensity observed from the core鈥搒hell nanowires with spectral features similar to that of bulk Ge indicates effective surface passivation. Thermal stability of these core鈥搒hell heterostructures has been systematically investigated, with a method demonstrated to avoid misfit strain relaxation during postgrowth annealing.
Keywords:
Core鈭抯hell nanowires; in situ transmission electron microscopy (TEM); thermal stability; photoluminescence