Odd鈥揈ven Effects in Charge Transport across n-Alkanethiolate-Based SAMs
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文摘
This paper compares rates of charge transport across self-assembled monolayers (SAMs) of n-alkanethiolates having odd and even numbers of carbon atoms (nodd and neven) using junctions with the structure MTS/SAM//Ga2O3/EGaIn (M = Au or Ag). Measurements of current density, J(V), across SAMs of n-alkanethiolates on AuTS and AgTS demonstrated a statistically significant odd鈥揺ven effect on AuTS, but not on AgTS, that could be detected using this technique. Statistical analysis showed the values of tunneling current density across SAMs of n-alkanethiolates on AuTS with nodd and neven belonging to two separate sets, and while there is a significant difference between the values of injection current density, J0, for these two series (log|J0Au,even| = 4.0 卤 0.3 and log|J0Au,odd| = 4.5 卤 0.3), the values of tunneling decay constant, 尾, for nodd and neven alkyl chains are indistinguishable (尾Au,even = 0.73 卤 0.02 脜鈥?, and 尾Au,odd= 0.74 卤 0.02 脜鈥?). A comparison of electrical characteristics across junctions of n-alkanethiolate SAMs on gold and silver electrodes yields indistinguishable values of 尾 and J0 and indicates that a change that substantially alters the tilt angle of the alkyl chain (and, therefore, the thickness of the SAM) has no influence on the injection current density across SAMs of n-alkanethiolates.

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