n-Type Organic Field-Effect Transistors with High Electron Mobilities Based on Thiazole-Thiazolothiazole Conjugated Molecules

详细信息    查看全文

• 作者：Masashi Mamada ; Jun-ichi Nishida ; Daisuke Kumaki ; Shizuo Tokito ; Yoshiro Yamashita
• 刊名：Chemistry of Materials
• 出版年：2007
• 出版时间：October 30, 2007
• 年：2007
• 卷：19
• 期：22
• 页码：5404 - 5409
• 全文大小：143K
• 年卷期：v.19,no.22(October 30, 2007)
• ISSN：1520-5002

文摘

Two novel thiazolothiazole derivatives with trifluoromethylphenyl groups were synthesized andcharacterized by differential scanning calorimetry, X-ray single crystal analysis, UV-vis absorptionspectroscopy, cyclic voltammetry, field-effect transistor (FET) characteristics, and X-ray diffraction. TheFET characteristics of thiazole-thiazolothiazole derivatives are strongly dependent on the nitrogenpositions. The derivative with a 2-(4-trifluoromethylphenyl)thiazole unit afforded a high performanceFET device that showed a high electron mobility of 0.12 cm² V^-1 s^-1 with a bottom contact configuration.Moreover, with a top contact configuration, high electron mobilities of 0.24-0.64 cm² V^-1 s^-1 and lowthreshold voltages of 18-24 V depending on the surface modification were achieved. The relationshipbetween molecular structure, molecular packing, electrical characteristics, film structure, and FETperformance were investigated.