文摘
Two novel thiazolothiazole derivatives with trifluoromethylphenyl groups were synthesized andcharacterized by differential scanning calorimetry, X-ray single crystal analysis, UV-vis absorptionspectroscopy, cyclic voltammetry, field-effect transistor (FET) characteristics, and X-ray diffraction. TheFET characteristics of thiazole-thiazolothiazole derivatives are strongly dependent on the nitrogenpositions. The derivative with a 2-(4-trifluoromethylphenyl)thiazole unit afforded a high performanceFET device that showed a high electron mobility of 0.12 cm2 V-1 s-1 with a bottom contact configuration.Moreover, with a top contact configuration, high electron mobilities of 0.24-0.64 cm2 V-1 s-1 and lowthreshold voltages of 18-24 V depending on the surface modification were achieved. The relationshipbetween molecular structure, molecular packing, electrical characteristics, film structure, and FETperformance were investigated.