Epitaxial Graphene on 4H-SiC(0001) Grown under Nitrogen Flux: Evidence of Low Nitrogen Doping and High Charge Transfer
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- 作者：Emilio Velez-Fort ; Claire Mathieu ; Emiliano Pallecchi ; Marine Pigneur ; Mathieu G. Silly ; Rachid Belkhou ; Massimiliano Marangolo ; Abhay Shukla ; Fausto Sirotti ; Abdelkarim Ouerghi
- 刊名：ACS Nano
- 出版年：2012
- 出版时间：December 21, 2012
- 年：2012
- 卷：6
- 期：12
- 页码：10893-10900
- 全文大小：483K
- 年卷期：v.6,no.12(December 21, 2012)
- ISSN：1936-086X
文摘
Nitrogen doping of graphene is of great interest for both fundamental research to explore the effect of dopants on a 2D electrical conductor and applications such as lithium storage, composites, and nanoelectronic devices. Here, we report on the modifications of the electronic properties of epitaxial graphene thanks to the introduction, during the growth, of nitrogen-atom substitution in the carbon honeycomb lattice. High-resolution transmission microscopy and low-energy electron microscopy investigations indicate that the nitrogen-doped graphene is uniform at large scale. The substitution of nitrogen atoms in the graphene planes was confirmed by high-resolution X-ray photoelectron spectroscopy, which reveals several atomic configurations for the nitrogen atoms: graphitic-like, pyridine-like, and pyrrolic-like. Angle-resolved photoemission measurements show that the N-doped graphene exhibits large n-type carrier concentrations of 2.6 脳 1013 cm鈥?, about 4 times more than what is found for pristine graphene, grown under similar pressure conditions. Our experiments demonstrate that a small amount of dopants (<1%) can significantly tune the electronic properties of graphene by shifting the Dirac cone about 0.3 eV toward higher binding energies with respect to the 蟺 band of pristine graphene, which is a key feature for envisioning applications in nanoelectronics.