Organophosphonate Self-Assembled Monolayers for Gate Dielectric Surface Modification of Pentacene-Based Organic Thin-Film Transistors: A Comparative Study

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• 作者：Joseph E. McDermott ; Matthew McDowell ; Ian G. Hill ; Jaehyung Hwang ; Antoine Kahn ; Steven L. Bernasek ; Jeffrey Schwartz
• 刊名：Journal of Physical Chemistry A
• 出版年：2007
• 出版时间：December 13, 2007
• 年：2007
• 卷：111
• 期：49
• 页码：12333 - 12338
• 全文大小：231K
• 年卷期：v.111,no.49(December 13, 2007)
• ISSN：1520-5215

文摘

Organic thin-film transistors using pentacene as the semiconductor were fabricated on silicon. A series ofphosphonate-based self-assembled monolayers (SAMs) was used as a buffer between the silicon dioxide gatedielectric and the active pentacene channel region. Octadecylphosphonate, (quarterthiophene)phosphonate,and (9-anthracene)phosphonate SAMs were examined. Significant improvements in the sub-threshold slopeand threshold voltage were observed for each SAM treatment as compared to control devices fabricatedwithout the buffer. These improvements were related to structural motif relationships between the pentacenesemiconductor and the SAM constituents. Measured transistor properties were consistent with a reduction indensity of charge trapping states at the semiconductor-dielectric interface that was effected by introductionof the self-assembled monolayer.