Controlled Synthesis of ZrS2 Monolayer and Few Layers on Hexagonal Boron Nitride

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• 作者：Mei Zhang ; Yiming Zhu ; Xinsheng Wang ; Qingliang Feng ; Shanlin Qiao ; Wen Wen ; Yanfeng Chen ; Menghua Cui ; Jin Zhang ; Congzhong Cai ; Liming Xie
• 刊名：Journal of the American Chemical Society
• 出版年：2015
• 出版时间：June 10, 2015
• 年：2015
• 卷：137
• 期：22
• 页码：7051-7054
• 全文大小：377K
• ISSN：1520-5126

文摘

Group IVB transition metal (Zr and Hf) dichalcogenide (TMD) monolayers can have higher carrier mobility and higher tunneling current density than group VIB (Mo and W) TMD monolayers. Here we report the synthesis of hexagonal ZrS₂ monolayer and few layers on hexagonal boron nitride (BN) using ZrCl₄ and S as precursors. The domain size of ZrS₂ hexagons is around 1鈥? 渭m. The number of layers of ZrS₂ was controlled by tuning the evaporation temperature of ZrCl₄. The stacking angle between ZrS₂ and BN characterized by transmission electron microscopy shows a preferred stacking angle of near 0掳. Field-effect transistors (FETs) fabricated on ZrS₂ flakes showed n-type transport behavior with an estimated mobility of 0.1鈥?.1 cm² V^鈥? s^鈥?.