High-Mobility, Heterostructure Light-Emitting Transistors and Complementary Inverters

详细信息    查看全文

• 作者：Mujeeb Ullah ; Kristen Tandy ; Jun Li ; Zugui Shi ; Paul L. Burn ; Paul Meredith ; Ebinazar B. Namdas
• 刊名：ACS Photonics
• 出版年：2014
• 出版时间：October 15, 2014
• 年：2014
• 卷：1
• 期：10
• 页码：954-959
• 全文大小：507K
• ISSN：2330-4022

文摘

Light-emitting field effect transistors (LEFETs) are optoelectronic devices that can simultaneously execute light emission and the standard logic functions of a transistor in a single device architecture. In this article, we show that ambipolar LEFETs can be made in a bilayer structure using Super Yellow, a light-emitting polymer layer, and a high-mobility diketopyrrolo-pyrrole-based copolymer as an ambipolar charge-transporting layer. The LEFETs were fabricated in the bottom gate architecture with top-contact, air-stable, symmetric Au鈥揂u electrodes. The devices show light emission in both electron and hole accumulation modes with an external quantum efficiency (EQE) of 0.1% at a brightness of 650 cd/m² in electron accumulation mode, and an EQE of 0.001% at a brightness of 4 cd/m² in hole accumulation mode. We have also demonstrated a light-emitting inverter by combining two LEFETs into the inverter architecture. The light-emitting inverter generates both electrical and optical signals with an electrical gain of 112.

Keywords:

ambipolar; organic semiconductor; light-emitting transistor; inverter